MMST2907A [BL Galaxy Electrical]
PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | MMST2907A |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总3页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
MMST2907A
FEATURES
z
z
z
Power dissipation.(PC=200mW)
Epitaxial planar die construction.
Complements the MMST2222A.
Pb
Lead-free
APPLICATIONS
z
General purpose application.
SOT-323
ORDERING INFORMATION
Type No.
Marking
K3F
Package Code
SOT-323
MMST2907A
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
-60
-5
V
V
Collector Current -Continuous
Collector Dissipation
-600
200
mA
mW
℃
PC
Junction and Storage Temperature
Tj,Tstg
-55~150
Document number: BL/SSSTF050
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
MMST2907A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC=-10μA,IE=0
IC=-10mA,IB=0
IE=-10μA,IC=0
VCB=-50V,IE=0
MIN
-60
-50
-5
MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
-10
nA
VCE=-10V,IC=-0.1mA
VCE=-10V,IC=-1.0mA
VCE=-10V,IC=-10mA
VCE=-10V,IC=-150mA
VCE=-10V,IC=-500mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-150mA, IB=-15mA
VCE=-12V, IC= -2mA
f=30MHz
75
100
100
100
50
DC current gain
hFE
300
-0.4
-1.6
-1.3
-2.6
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
V
V
140
MHz
Collector output capacitance
Collector input capacitance
Cobo
Cibo
VCB=-10V,IE=0,f=1MHz
VEB=-2.0V,IC=0,f=1MHz
8
pF
pF
30
Turn-on time
Delay time
Rise time
ton
td
tr
VCC=-30V,IC=-150mA,
IB1=-15mA
Turn-off time
Storage time
Fall time
toff
ts
VCC=-6.0V,IC=-150mA,
IB1=IB2=-15mA
tf
Document number: BL/SSSTF050
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
MMST2907A
PACKAGE OUTLINE
Plastic surface mounted package
SOT-323
SOT-323
Dim
A
Min
1.8
Max
2.2
B
1.15
1.35
C
D
E
1.0Typical
0.15
0.25
1.2
0.35
0.40
1.4
G
H
J
0.02
0.1
0.1Typical
K
2.1
2.3
All Dimensions in mm
PACKAGE INFORMATION
Device
Package
Shipping
MMST2907A
SOT-323
3000/Tape&Reel
Document number: BL/SSSTF050
Rev.A
www.galaxycn.com
3
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